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专利名称：Power MOSFET, power MOSFET packaged
device, and method of manufacturing powerMOSFET
发明人：Kazuya Fukuhara申请号：US10849035申请日：20040520
公开号：US20050012117A1公开日：20050120
专利附图：
摘要：A source terminal layer, a gate terminal layer, and a drain terminal layer aredisposed on main surfaces, opposite to each other, on main surfaces of a semiconductor
substrate. These terminal layers are laid out on the respective main surfaces with suchsizes as to fall within the areas of the respective main surfaces and joined to theircorresponding source, gate, and drain electrodes. A power MOSFET is packaged on acircuit board such that the respective main surfaces intersect substantially at right anglesto the circuit board. By a terminal board isolating step or a method of evaporating ametal layer onto the source, gate, and drain electrodes, the power MOSFET is formedwith the source terminal layer, gate terminal layer, and drain terminal layer at the stageof a semiconductor wafer.
申请人：Kazuya Fukuhara
地址：Tokyo JP
国籍：JP
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