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专利名称：Method of forming interconnectings in
semiconductor devices
发明人：Mario Napolitano申请号：US10014921申请日：20011211
公开号：US20020090810A1公开日：20020711
专利附图：
摘要：A method for forming an conductive interconnection in an electronicsemiconductor device includes forming a layer of insulating material on a substrate ofsemiconductor material having a contact region therein, and forming a first opening
through the layer of insulating material to expose the contact region. The first opening isfilled with a material to form a first connection element. A first layer comprising a firstremovable conductive material is formed adjacent the layer of insulating material and thefirst connection element. The method further includes forming a second opening in thefirst layer to expose the first connection element, and filling the second opening with thematerial to form a second connection element. The first removable conductive material isremoved except for a portion underlying the second connection element to expose thelayer of insulating material. The areas left free after removing the first removableconductive material are filled with a dielectric material.
申请人：STMICROELECTRONICS S.R.L.
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