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STD1NK60-1

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STD1NK60-STD1NK60-1

STQ1HNK60R

N-CHANNEL600V-8Ω -1ADPAK/IPAK/TO-92

SuperMESH™PowerMOSFET

TYPESTD1NK60STD1NK60-1STQ1HNK60R

sssss

VDSS600V600V600V

RDS(on)<8.5Ω<8.5Ω<8.5Ω

ID1A1A0.4A

Pw30W30W3W

IPAKTYPICALRDS(on)=8Ω

EXTREMELYHIGHdv/dtCAPABILITY100%AVALANCHETESTEDGATECHARGEMINIMIZED

NEWHIGHVOLTAGEBENCHMARK

12331DPAKDESCRIPTION

TheSuperMESH™seriesisobtainedthroughanextremeoptimizationofST’swellestablishedstrip-basedPowerMESH™layout.Inadditiontopushingon-resistancesignificantlydown,specialcareistak-entoensureaverygooddv/dtcapabilityforthemostdemandingapplications.Suchseriescomple-mentsSTfullrangeofhighvoltageMOSFETsin-cludingrevolutionaryMDmesh™products.

TO-92(Ammopack)TO-92INTERNALSCHEMATICDIAGRAMAPPLICATIONS

sSWITCHMODELOWPOWERSUPPLIES(SMPS)

sLOWPOWER,LOWCOSTCFL(COMPACTFLUORESCENTLAMPS)

sLOWPOWERBATTERYCHARGERS

ORDERINGINFORMATION

SALESTYPESTD1NK60T4STD1NK60-1STQ1HNK60RSTQ1HNK60R-AP

MARKINGD1NK60D1NK601HNK60R1HNK60R

PACKAGEDPAKIPAKTO-92TO-92

PACKAGINGTAPE&REEL

TUBEBULKAMMOPAK

June20031/13

STD1NK60-STD1NK60-1-STQ1HNK60R

ABSOLUTEMAXIMUMRATINGS

Symbol

Parameter

STD1NK60STD1NK60-1

Value

STQ1HNK60R

Unit

VDSVDGRVGSIDIDIDM(󰀁)PTOTdv/dt(1)TjTstg

Drain-sourceVoltage(VGS=0)Drain-gateVoltage(RGS=20kΩ)Gate-sourceVoltage

DrainCurrent(continuous)atTC=25°CDrainCurrent(continuous)atTC=100°CDrainCurrent(pulsed)TotalDissipationatTC=25°CDeratingFactor

PeakDiodeRecoveryvoltageslopeOperatingJunctionTemperatureStorageTemperature

1.00.634300.24

600600±30

0.40.251.630.025

3-55to150

VVVAAAWW/°CV/ns°C

(󰀁)Pulsewidthlimitedbysafeoperatingarea

(1)ISD≤1.0A,di/dt≤100A/µs,VDD≤V(BR)DSS,Tj≤TJMAX.

THERMALDATA

DPAK/IPAK

Rthj-caseRthj-ambRthj-lead

Tl

ThermalResistanceJunction-caseMaxThermalResistanceJunction-ambientMaxThermalResistanceJunction-leadMaxMaximumLeadTemperatureForSolderingPurpose

2754.16100

12040260TO-92

°C/W°C/W°C/W°C

AVALANCHECHARACTERISTICS

SymbolIAREAS

Parameter

AvalancheCurrent,RepetitiveorNot-Repetitive(pulsewidthlimitedbyTjmax)

SinglePulseAvalancheEnergy

(startingTj=25°C,ID=IAR,VDD=50V)

MaxValue

DPAK/IPAK

125

TO-92

AmJUnit

2/13

STD1NK60-STD1NK60-1-STQ1HNK60R

ELECTRICALCHARACTERISTICS(TCASE=25°CUNLESSOTHERWISESPECIFIED)ON/OFF

SymbolV(BR)DSSIDSSIGSSVGS(th)RDS(on)

Parameter

Drain-source

BreakdownVoltageZeroGateVoltage

DrainCurrent(VGS=0)Gate-bodyLeakageCurrent(VDS=0)GateThresholdVoltageStaticDrain-sourceOnResistance

TestConditions

ID=1mA,VGS=0

VDS=MaxRating

VDS=MaxRating,TC=125°CVGS=±30V

VDS=VGS,ID=250µAVGS=10V,ID=0.5A

2.25

38

Min.600

150±1003.78.5

Typ.

Max.

UnitVµAµAnAVΩ

DYNAMIC

Symbolgfs(1)CissCossCrss

Parameter

ForwardTransconductanceInputCapacitanceOutputCapacitanceReverseTransferCapacitance

TestConditions

VDS>ID(on)xRDS(on)max,ID=0.5A

VDS=25V,f=1MHz,VGS=0

Min.

Typ.115623.53.8

Max.

UnitSpFpFpF

SWITCHINGON

Symboltd(on)trQgQgsQgd

Parameter

Turn-onDelayTimeRiseTime

TotalGateChargeGate-SourceChargeGate-DrainCharge

TestConditions

VDD=300V,ID=0.5ARG=4.7ΩVGS=10V

(ResistiveLoadsee,Figure3)VDD=480V,ID=1.0A,VGS=10V,RG=4.7Ω

Min.

Typ.6.5571.13.4

10Max.

UnitnsnsnCnCnC

SWITCHINGOFF

Symboltd(off)tftr(Voff)tftc

Parameter

Turn-offDelayTimeFallTime

Off-voltageRiseTimeFallTime

Cross-overTime

TestConditions

VDD=300V,ID=0.5ARG=4.7ΩVGS=10V

(ResistiveLoadsee,Figure3)VDD=480V,ID=1.0A,RG=4.7Ω,VGS=10V

(InductiveLoadsee,Figure5)

Min.

Typ.1925242544

Max.

Unitnsnsnsnsns

SOURCEDRAINDIODE

SymbolISDISDM(2)VSD(1)trrQrrIRRM

Parameter

Source-drainCurrent

Source-drainCurrent(pulsed)ForwardOnVoltageReverseRecoveryTimeReverseRecoveryChargeReverseRecoveryCurrent

ISD=1.0A,VGS=0ISD=1.0A,di/dt=100A/µsVDD=25V,Tj=150°C(seetestcircuit,Figure5)

2293773.3

TestConditions

Min.

Typ.

Max.141.6

UnitAAVnsµCA

Note:1.Pulsed:Pulseduration=300µs,dutycycle1.5%.

2.Pulsewidthlimitedbysafeoperatingarea.

3/13

STD1NK60-STD1NK60-1-STQ1HNK60R

SafeOperatingAreaForDPAK/IPAKThermalImpedanceForDPAK/IPAKSafeOperatingAreaForTO-92ThermalImpedanceForTO-92OutputCharacteristics

TransferCharacteristics4/13

STD1NK60-STD1NK60-1-STQ1HNK60R

Transconductance

StaticDrain-sourceOnResistance

GateChargevsGate-sourceVoltageCapacitanceVariationsNormalizedGateThresholdVoltagevsTemp.NormalizedOnResistancevsTemperature5/13

STD1NK60-STD1NK60-1-STQ1HNK60R

Source-drainDiodeForwardCharacteristics

NormalizedBVDSSvsTemperature

MaxIdCurrentvsTc

MaximumAvalancheEnergyvsTemperature6/13

STD1NK60-STD1NK60-1-STQ1HNK60R

Fig.1:UnclampedInductiveLoadTestCircuit

Fig.2:UnclampedInductiveWaveform

Fig.3:SwitchingTimesTestCircuitForResistiveLoad

Fig.4:GateChargetestCircuit

Fig.5:TestCircuitForInductiveLoadSwitchingAndDiodeRecoveryTimes

7/13

STD1NK60-STD1NK60-1-STQ1HNK60R

TO-251 (IPAK) MECHANICAL DATADIM.AA1A3BB2B3B5B6CC2DEGHLL1L20.450.4866.44.415.990.80.80.30.950.60.66.26..616.39.41.21C mmMIN.2.20.90.70.5.2TYP.MAX.2.41.10.95.40.85MIN.0.0860.0350.0250.204inchTYP.MAX.0.0940.0430.0510.0310.2120.0330.0120.0370.0170.0190.2360.2520.1730.6260.3540.0310.0310.0230.0230.2440.2600.1810.10.3700.0470.0391.3 0.027A HC2 1 2 3 L2DB3 B6 A1 L= = = = B5 B A3 = = B2 L1G E 0068771-E8/13

STD1NK60-STD1NK60-1-STQ1HNK60R

TO-252 (DPAK) MECHANICAL DATADIM.MIN.AA1A2BB2CC2DEGHL2L4V20.600o2.200.900.030.5.200.450.486.006.404.409.350.81.008o0.0240ommTYP.MAX.2.401.100.230.905.400.600.606.206.604.6010.10MIN.0.0870.0350.0010.0250.2040.0180.0190.2360.2520.1730.3680.0310.0390oinchTYP.MAX.0.0940.0430.0090.0350.2130.0240.0240.2440.2600.1810.398P032P_B9/13

STD1NK60-STD1NK60-1-STQ1HNK60R

TO-92 MECHANICAL DATAmm.MIN.4.320.3.453.302.411.1412.702.160.920.415°TYPMAX.4.950.514.953.942.671.4015.492.411.520.56MIN.0.1700.0140.1750.1300.0940.0440.500.0850.0360.0165°inchTYP.MAX.0.1940.0200.1940.1550.1050.0550.6100.0940.0600.022DIM.AbDEee1LRS1WV10/13

STD1NK60-STD1NK60-1-STQ1HNK60R

DPAKFOOTPRINTTUBESHIPMENT(nosuffix)*

Alldimensionsareinmillimeters

Alldimensionsareinmillimeters

TAPEANDREELSHIPMENT(suffix”T4”)*

REELMECHANICALDATA

DIM.ABCDGNT

1.512.820.216.450

22.418.413.2mmMIN.

MAX.330

0.0590.5040.5200.7950.50.7241.968

0.881

BULKQTY2500inchMIN.

MAX.12.992

TAPEMECHANICALDATA

DIM.A0B0B1DD1EFK0P0P1P2RW

1.51.51.657.42.553.97.91.94015.7

1.857.62.754.18.12.116.3

BASEQTY2500mmMIN.6.810.4

MAX.710.612.11.6

inchMIN.

MAX.

0.2670.2750.4090.417

0.4760.0590.0630.0590.0650.0730.2910.2990.1000.1080.1530.1610.3110.3190.0750.0821.5740.618

0.1

*onsalestype11/13

STD1NK60-STD1NK60-1-STQ1HNK60R

TO-92AMMOPACK

mm.

MIN.

TYP

MAX.4.83.81.62.3

0.45812.55.652.44-217.55.78.518.515.53.8

1186912.76.352.54

0.50512.97.052.942196.39.250.520.516.5254.20.911

3-1

1

0.11-0.04

0.04

0.15

0.157

0.720.61

0.63

0.0180.490.220.09-0.080.690.220.33

0.710.230.350.50.250.1

MIN.

inchTYP.

MAX.0.190.150.060.090.020.510.270.110.080.740.240.360.020.800.650.980.160.0350.43

DIM.A1TT1T2dP0P2F1,F2deltaHWW0W1W2HH0H1D0tLl1deltaP

12/13

STD1NK60-STD1NK60-1-STQ1HNK60R

Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for theconsequences of use of such information nor for any infringement of patents or other rights of third parties which may result fromits use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specificationsmentioned in this publication are subject to change without notice. This publication supersedes and replaces all informationpreviously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices orsystems without express written approval of STMicroelectronics.© The ST logo is a registered trademark of STMicroelectronics© 2003 STMicroelectronics - Printed in Italy - All Rights ReservedSTMicroelectronics GROUP OF COMPANIESAustralia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - United States.© http://www.st.com13/13

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