PHASE CHANGE MEMORY DEVICES AND FABRICATION METHOD

专利名称：PHASE CHANGE MEMORY DEVICES AND

FABRICATION METHODS THEREOF

发明人：Wei-Su Chen申请号：US12796638申请日：20100608

公开号：US20110155993A1公开日：20110630

专利附图：

摘要：Phase change memory devices and fabrication methods thereof are presented.A phase change memory device includes a substrate structure. A first electrode isdisposed on the substrate structure. A hollowed-cone hydrogen silsesquioxane (HSQ)

structure is formed on the first electrode. A multi-level cell phase change memorystructure is disposed on the hollowed-cone HSQ structure. A second electrode isdisposed on the multi-level cell phase change memory structure.

申请人：Wei-Su Chen

地址：Hsinchu City TW

国籍：TW

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