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FLASH MEMORY DEVICE AND MEMORY SYSTEM INCLUDING TH

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专利名称:FLASH MEMORY DEVICE AND MEMORY

SYSTEM INCLUDING THE SAME

发明人:Kui-Yon Mun,Jongkeun Ahn申请号:US13326820申请日:20111215

公开号:US20120166714A1公开日:20120628

专利附图:

摘要:A method of controlling a memory, determining whether data access is random;generating a first random sequence (RS) data based on a first seed if data access is notrandom (column offset=0); mixing the first RS data with data read from the memory or

data to be written to the memory; generating a second seed from a first seed if dataaccess is random (column offset not=0); generating a second RS data based on thesecond seed; and mixing the second RS data with data read from the memory or data tobe written to the memory.

申请人:Kui-Yon Mun,Jongkeun Ahn

地址:Hwaseong-si KR,Yongin-si KR

国籍:KR,KR

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