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专利名称：Method for manufacturing microelectronic
devices and devices according to suchmethod
发明人：Witvrouw, Ann,Haspeslagh, Luc,Claes, Gert申请号：EP09177497.6申请日：20091130公开号：EP2327658A1公开日：20110601
专利附图：
摘要：A method is disclosed for manufacturing a sealed cavity comprised in amicroelectronic device, comprising forming a sacrificial layer at least at locations where
the cavity is to be provided, depositing a membrane layer on top of the sacrificial layer,patterning the membrane layer in at least two separate membrane layer blocks,removing the sacrificial laye through the membrane layer, and sealing the cavity bysealing the membrane layer, wherein patterning the membrane layer is performed afterremoval of the sacrificial layer; and associated microelectronic devices.
申请人：IMEC
地址：Kapeldreef 75 3001 Leuven BE
国籍：BE
代理机构：D'Halleweyn, Nele Veerle Trees Gertrudis
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