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专利名称：Semiconductor integrated circuits with
power reduction mechanism
发明人：Takeshi Sakata,Kiyoo Itoh,Masashi Horiguchi申请号：US11356100申请日：20060217
公开号：US20060139052A1公开日：20060629
专利附图：
摘要：Power dissipation of a semiconductor integrated circuit chip is reduced when itis operated at an operating voltage of 2.5 V or below. A switching element is provided ineach circuit block within the chip. Constants of the switching element are set so that
leakage current in each switching element in their off-state is smaller than thesubthreshold current of MOS transistors within the corresponding circuit block. Activecurrent is supplied to active circuit blocks, while switching elements of non-active circuitblocks are turned off. Thus, dissipation currents of non-active circuit blocks are limited toleakage current value of corresponding switching elements. Thus, the sum of dissipationcurrents of non-active circuit blocks is made smaller than the active current in the activecircuit blocks. As a result, power dissipation in the semiconductor integrated circuit chipcan be reduced even in the active state.
申请人：Takeshi Sakata,Kiyoo Itoh,Masashi Horiguchi
地址：Kunitachi-shi JP,Higashikurume-shi JP,Kawasaki-shi JP
国籍：JP,JP,JP
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