专利内容由知识产权出版社提供
专利名称：Memory device and method for forming the
same
发明人：Sheng Fen Chiu,Fansheng Kung申请号：US14509334申请日：20141008公开号：US10325916B2公开日：20190618
专利附图：
摘要：Various embodiments provide memory devices and methods for forming thesame. In an exemplary method, a provided substrate has one or more memory cells, amemory cell of which includes a control gate layer. The control gate layer has a first
portion and a second portion on the first portion. A silicide layer is formed in the controlgate layer and covers at least a sidewall of the second portion. A portion of the silicidelayer is removed to reduce a size of the silicide layer in a direction parallel to thesubstrate. A fourth dielectric layer is formed on the substrate and on the memory cell,and has a top surface higher than a top surface of the memory cell. An opening is formedin the fourth dielectric layer and exposes a portion of the substrate between adjacentmemory cells. A conductive structure is formed in the opening.
申请人：Semiconductor Manufacturing International (Shanghai) Corporation
地址：Shanghai CN
国籍：CN
代理机构：Anova Law Group, PLLC
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