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专利名称：PRODUCTION METHOD FOR THE
CAPACITOR
发明人：NAITO, Kazumi, Corporate R & D
Center,YABE, Shoji, Corporate R & D Center
申请号：EP04708882.8申请日：20040206公开号：EP1592029B1公开日：20190703
摘要：A method of producing a capacitor which uses a conductor formed with adielectric layer on the surface thereof as one electrode and a semiconductor layer as theother electrode, wherein an electric fine defect is produced in the dielectric layer beforethe semiconductor layer is formed on the dielectric layer by a conduction method. Thecapacitor according to this production method has a good capacity appearance rate, alow ESR and an excellent reliability.
代理机构：Strehl Schübel-Hopf & Partner
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